Screened potential of a charged step defect on a semiconductor surface
Identifieur interne : 007153 ( Main/Repository ); précédent : 007152; suivant : 007154Screened potential of a charged step defect on a semiconductor surface
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Abstract
Following Gibbs' approach, a general electrostatic model of heterogeneous systems with non-homogeneous interfaces is proposed. The intrinsic surface polarization is taken into account through the introduction of a surface dielectric constant and the electrostatic boundary conditions are generalized as two-dimensional Poisson equations. This model is applied to analyse the electrostatic potential of a charged step defect on a semiconductor surface. The step line charge density, the surface charge density, and the surface dielectric permittivity are determined from the experimental data for the InP (110) surface.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Screened potential of a charged step defect on a semiconductor surface</title><author><name sortKey="Slavchov, Radomir" uniqKey="Slavchov R">Radomir Slavchov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemistry, University of Sofia, 1 James Bourchier Boulevard</s1><s2>1126 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Ivanov, Tzanko" uniqKey="Ivanov T">Tzanko Ivanov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Physics, University of Sofia, 5 James Bourchier Boulevard</s1><s2>1126 Sofia</s2><s3>BGR</s3><sZ>2 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author><author><name sortKey="Radoev, Boryan" uniqKey="Radoev B">Boryan Radoev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemistry, University of Sofia, 1 James Bourchier Boulevard</s1><s2>1126 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Bulgarie</country><placeName><settlement type="city">Sofia</settlement><region nuts="2">Sofia-ville (oblast)</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0376608</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0376608 INIST</idno><idno type="RBID">Pascal:07-0376608</idno><idno type="wicri:Area/Main/Corpus">007672</idno><idno type="wicri:Area/Main/Repository">007153</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title><title level="j" type="main">Journal of physics. Condensed matter : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Boundary conditions</term><term>Charge density</term><term>Defect states</term><term>Defects</term><term>Electrostatic potential</term><term>III-V semiconductors</term><term>Indium phosphides</term><term>Permittivity</term><term>Poisson equation</term><term>Polarization</term><term>Screening</term><term>Semiconductor materials</term><term>Surface electron state</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet écran</term><term>Défaut</term><term>Etat électronique surface</term><term>Polarisation</term><term>Constante diélectrique</term><term>Condition aux limites</term><term>Equation Poisson</term><term>Potentiel électrostatique</term><term>Densité charge</term><term>Etat défaut</term><term>Semiconducteur</term><term>Indium phosphure</term><term>Semiconducteur III-V</term><term>InP</term><term>7320H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Following Gibbs' approach, a general electrostatic model of heterogeneous systems with non-homogeneous interfaces is proposed. The intrinsic surface polarization is taken into account through the introduction of a surface dielectric constant and the electrostatic boundary conditions are generalized as two-dimensional Poisson equations. This model is applied to analyse the electrostatic potential of a charged step defect on a semiconductor surface. The step line charge density, the surface charge density, and the surface dielectric permittivity are determined from the experimental data for the InP (110) surface.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0></fA03><fA05><s2>19</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Screened potential of a charged step defect on a semiconductor surface</s1></fA08><fA11 i1="01" i2="1"><s1>SLAVCHOV (Radomir)</s1></fA11><fA11 i1="02" i2="1"><s1>IVANOV (Tzanko)</s1></fA11><fA11 i1="03" i2="1"><s1>RADOEV (Boryan)</s1></fA11><fA14 i1="01"><s1>Faculty of Chemistry, University of Sofia, 1 James Bourchier Boulevard</s1><s2>1126 Sofia</s2><s3>BGR</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Physics, University of Sofia, 5 James Bourchier Boulevard</s1><s2>1126 Sofia</s2><s3>BGR</s3><sZ>2 aut.</sZ></fA14><fA20><s2>226005.1-226005.6</s2></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000162302530150</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0376608</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Following Gibbs' approach, a general electrostatic model of heterogeneous systems with non-homogeneous interfaces is proposed. The intrinsic surface polarization is taken into account through the introduction of a surface dielectric constant and the electrostatic boundary conditions are generalized as two-dimensional Poisson equations. This model is applied to analyse the electrostatic potential of a charged step defect on a semiconductor surface. The step line charge density, the surface charge density, and the surface dielectric permittivity are determined from the experimental data for the InP (110) surface.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet écran</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Screening</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Défaut</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Defects</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Etat électronique surface</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Surface electron state</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Estado electrónico superficie</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Polarisation</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Polarization</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Constante diélectrique</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Permittivity</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Condition aux limites</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Boundary conditions</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Equation Poisson</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Poisson equation</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Potentiel électrostatique</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Electrostatic potential</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Potencial electrostático</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité charge</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Charge density</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etat défaut</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Defect states</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>48</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>48</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>7320H</s0><s4>INC</s4><s5>60</s5></fC03><fN21><s1>239</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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